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march 2006 1 document control # ml0019 rev 0.2 STK16C88-3 32k x 8 autostoreplus ? nvsram 3.3v quantumtrap ? cmos nonvolatile static ram features ? transparent data save on power down ? internal capacitor guarantees autostore ? regardless of power-down slew rate ? directly replaces 32k x 8 static ram, battery- backed ram or eeprom ? 35 access time ? store to nonvolatile elements initiated by software or autostoreplus ? ? recall to sram initiated by software or power restore ? 10ma typical i cc at 200ns cycle time ? unlimited read, write and recall cycles ? 1,000,000 store cycles to nonvolatile ele - ments (commercial/industrial) ? 100-year data retention in nonvolatile ele - ments (commercial/industrial) ? single 3.3v + 0.3v operation ? commercial and industrial temperatures ? 28-pin pdip package description the STK16C88-3 is a fast sram with a nonvolatile element incorporated in each static memory cell. the sram can be read and written an unlimited number of times, while independent nonvolatile data resides in nonvolatile elements. data transfers from the sram to the nonvolatile elements (the store operation) can take place automatically on power down. an internal capacitor guarantees the store operation regardless of power-down slew rate. transfers from the nonvolatile elements to the sram (the recall operation) take place automati - cally on restoration of power. initiation of store and recall cycles can also be controlled by entering control sequences on the sram inputs. the STK16C88-3 is pin-compatible with 32k x 8 sram s and battery-backed sram s, allowing direct substitu - tion while providing superior performance. the stk14c88-3, which uses an external capacitor, is also available. block diagram quantum trap 512 x 512 store recall column i/o column dec static ram array 512 x 512 row decoder input buffers store/ recall control power control a 6 a 7 a 11 a 12 a 13 a 14 dq 0 dq 1 dq 2 dq 3 dq 4 dq 5 dq 6 dq 7 software detect v cc a 0 - a 13 g e w a 9 a 8 a 10 a 3 a 2 a 0 a 1 a 4 a 5 internal capacitor pin configurations a 14 a 12 a 7 a 6 a 5 a 4 a 3 a 2 a 1 a 0 dq 0 dq 1 dq 2 v ss v cc a 13 a 8 a 9 a 11 g w 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 a 10 e dq 7 dq 6 dq 5 dq 4 dq 3 28 - 600 pdip pin names a 0 - a 14 address inputs w write enable dq 0 - dq 7 data in/out e chip enable g output enable v cc power (+ 3.3v) v ss ground
STK16C88-3 march 2006 2 document control # ml0019 rev 0.2 absolute maximum ratings a voltage on input relative to ground . . . . . . . . . . . . . .?0.5v to 4.5v voltage on input relative to v ss . . . . . . . . . . ?0.6v to (v cc + 0.5v) voltage on dq 0-7 . . . . . . . . . . . . . . . . . . . . . . ?0.5v to (v cc + 0.5v) temperature under bias . . . . . . . . . . . . . . . . . . . . . ?55 c to 125 c storage temperature . . . . . . . . . . . . . . . . . . . . . . . ?65 c to 150 c power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1w dc output current (1 output at a time, 1s duration) . . . . . . . . 15ma note a: stresses greater than those listed under ?absolute maximum rat - ings? may cause permanent damage to the device. this is a stress rating only, and functional operation of the device at conditions above those indicated in the operational sections of this specifica - tion is not implied. exposure to absolute maximum rating condi - tions for extended periods may affect reliability. dc characteristics (v cc = 3.0v-3.6v) note b: i cc 1 and i cc 3 are dependent on output loading and cycle rate. the specified values are obt ained with outputs unloaded. note c: i cc 2 and i cc 4 are the average currents required for the duration of the respective store cycles (t store ) . note d: e v ih will not produce standby current levels until any nonvolatile cycle in progress has timed out. ac test conditions capacitance e (t a = 25 c, f = 1.0mhz) note e: these parameters are guaranteed but not tested. symbol parameter commercial industrial units notes min max min max i cc 1 b average v cc current 50 52 ma t avav = 35ns i cc 2 c average v cc current during store 3 3 ma all inputs don?t care, v cc = max i cc 3 b average v cc current at t avav = 200ns 3.3v, 25c, typical 8 8 ma w (v cc ? 0.2v) all others cycling, cmos levels i sb 1 d average v cc current (standby, cycling ttl input levels) 18 19 ma t avav = 35ns, e v ih i sb 2 d v cc standby current (standby, stable cmos input levels) 1 1 ma e (v cc ? 0.2v) all others v in 0.2v or (v cc ? 0.2v) i ilk input leakage current 1 1 a v cc = max v in = v ss to v cc i olk off-state output leakage current 1 1 a v cc = max v in = v ss to v cc , e or g v ih v ih input logic ?1? voltage 2.2 v cc + .5 2.2 v cc + .5 v all inputs v il input logic ?0? voltage v ss ? .5 0.8 v ss ? .5 0.8 v all inputs v oh output logic ?1? voltage 2.4 2.4 v i out = ? 4ma v ol output logic ?0? voltage 0.4 0.4 v i out = 8ma t a operating temperature 0 70 ?40 85 c input pulse levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0v to 3v input rise and fall times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5ns input and output timing reference levels . . . . . . . . . . . . . . . 1.5v output load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see figure 1 symbol parameter max units conditions c in input capacitance 5 pf v = 0 to 3v c out output capacitance 7 pf v = 0 to 3v figure 1: ac output loading 317 ohms 30 pf 3.3v including output scope and fixture 351 ohms
STK16C88-3 march 2006 3 document control # ml0019 rev 0.2 sram read cycles #1 & #2 (v cc = 3.0v-3.6v) note f: w must be high during sram read cycles and low during sram write cycles. note g: i/o state assumes e , g < v il and w > v ih ; device is continuously selected. note h: measured + 200mv from steady state output voltage. sram read cycle #1: address controlled f, g sram read cycle #2: e controlled f no. symbols parameter STK16C88-3-35 units #1, #2 alt. min max 1 t elqv t acs chip enable access time 35 ns 2 t avav f t rc read cycle time 35 ns 3 t avqv g t aa address access time 35 ns 4 t glqv t oe output enable to data valid 15 ns 5 t axqx g t oh output hold after address change 5 ns 6 t elqx t lz chip enable to output active 5 ns 7 t ehqz h t hz chip disable to output inactive 13 ns 8 t glqx t olz output enable to output active 0 ns 9 t ghqz h t ohz output disable to output inactive 13 ns 10 t elicch e t pa chip enable to power active 0 ns 11 t ehiccl d , e t ps chip disable to power standby 35 ns data valid 5 t axqx 3 t avqv dq (data out) address 2 t avav standby data valid dq (data out) e address 2 t avav g i cc active 1 t elqv 11 t ehiccl 7 t ehqz 9 t ghqz 6 t elqx 8 t glqx 4 t glqv 10 t elicch
STK16C88-3 march 2006 4 document control # ml0019 rev 0.2 sram write cycles #1 & #2 (v cc = 3.0v-3.6v) note i: if w is low when e goes low, the outputs remain in the high-impedance state. note j: e or w must be v ih during address transitions. sram write cycle #1 : w controlled j sram write cycle #2 : e controlled j no. symbols parameter STK16C88-3-35 units #1 #2 alt. min max 12 t avav t avav t wc write cycle time 35 ns 13 t wlwh t wleh t wp write pulse width 25 ns 14 t elwh t eleh t cw chip enable to end of write 25 ns 15 t dvwh t dveh t dw data set-up to end of write 12 ns 16 t whdx t ehdx t dh data hold after end of write 0 ns 17 t avwh t aveh t aw address set-up to end of write 25 ns 18 t avwl t avel t as address set-up to start of write 0 ns 19 t whax t ehax t wr address hold after end of write 0 ns 20 t wlqz h, i t wz write enable to output disable 13 ns 21 t whqx t ow output active after end of write 5 ns previous data data out e address 12 t avav w 16 t whdx data in 19 t whax 13 t wlwh 18 t avwl 17 t avwh data valid 20 t wlqz 15 t dvwh high impedance 21 t whqx 14 t elwh data out e address 12 t avav w data in 13 t wleh data valid high impedance 14 t eleh 18 t avel 17 t aveh 15 t dveh 19 t ehax 16 t ehdx
STK16C88-3 march 2006 5 document control # ml0019 rev 0.2 autostoreplus ?/power-up recall (v cc = 3.0v-3.6v) note k: t restore starts from the time v cc rises above v switch . autostoreplus ?/power-up recall no. symbols parameter STK16C88-3 units notes standard min max 22 t restore power-up recall duration 550 s k 23 t stg minimum v cc slew time to ground 500 ns e, g 24 v switch low voltage trigger level 2.7 2.95 v 25 v reset low voltage reset level 2.4 v e v cc v switch v reset power-up recall w dq (data out) autostore ? 3.3v 22 t restore 23 t stg 24 25 31 t store brown out autostoreplus ? no recall (v cc did not go below v reset ) brown out autostoreplus ? recall when v cc returns above v switch power-up recall brown out no store due to no sram writes no recall (v cc did not go below v reset )
STK16C88-3 march 2006 6 document control # ml0019 rev 0.2 software store/recall mode selection note l: the six consecutive addresses must be in the order listed. w must be high during all six consecutive cycles to enable a nonvolatile cycle. note m: while there are 15 addresses on the STK16C88-3, only the lower 14 are used to control software modes. software store/recall cycle n, o (v cc = 3.0v-3.6v) note n: the software sequence is clocked with e controlled reads. note o: the six consecutive addresses must be in the order listed in the software store/recall mode selection table: (0e38, 31c7, 03e0, 3c1f, 303f, 0fc0) for a store cycle or (0e38, 31c7, 03e0, 3c1f, 303f, 0c63) for a recall cycle. w must be high during all six consecutive cycles. software store/recall cycle: e controlled o e w a 13 - a 0 (hex) mode i/o notes l h 0e38 31c7 03e0 3c1f 303f 0fc0 read sram read sram read sram read sram read sram nonvolatile store output data output data output data output data output data output high z l, m l h 0e38 31c7 03e0 3c1f 303f 0c63 read sram read sram read sram read sram read sram nonvolatile recall output data output data output data output data output data output high z l, m no. symbols parameter STK16C88-3-35 units min max 26 t avav store / recall initiation cycle time 35 ns 27 t avel n address set-up time 0 ns 28 t eleh n clock pulse width 25 ns 29 t elax g, n address hold time 20 ns 30 t recall recall cycle duration 20 s 31 t store store cycle duration 10 ms high impedance address #6 address #1 data valid 26 t avav data valid dq (data e address 31 30 t store / t recall 26 t avav 27 t avel 28 t eleh 29 t elax
STK16C88-3 march 2006 7 document control # ml0019 rev 0.2 the autostoreplus ? STK16C88-3 is a fast 32k x 8 sram that does not lose its data on power-down. the data is preserved in integral quantumtrap ? nonvolatile elements while power is unavailable. the nonvolatility of the STK16C88-3 does not require any system intervention or support: autostoreplus ? on power-down and automatic recall on power-up guarantee data integrity with - out the use of batteries. noise considerations note that the STK16C88-3 is a high-speed memory and so must have a high-frequency bypass capaci - tor of approximately 0.1 f connected between v cc and v ss , using leads and traces that are as short as possible. as with all high-speed cmos ics, normal careful routing of power, ground and signals will help prevent noise problems. sram read the STK16C88-3 performs a read cycle whenever e and g are low and w is high. the address speci - fied on pins a 0-14 determines which of the 32,768 data bytes will be accessed. when the read is initi - ated by an address transition, the outputs will be valid after a delay of t avqv ( read cycle #1). if the read is initiated by e or g , the outputs will be valid at t elqv or at t glqv , whichever is later ( read cycle #2). the data outputs will repeatedly respond to address changes within the t avqv access time without the need for transitions on any control input pins, and will remain valid until another address change or until e or g is brought high. sram write a write cycle is performed whenever e and w are low. the address inputs must be stable prior to entering the write cycle and must remain stable until either e or w goes high at the end of the cycle. the data on the common i/o pins dq 0-7 will be writ - ten into the memory if it is valid t dvwh before the end of a w controlled write or t dveh before the end of an e controlled write . it is recommended that g be kept high during the entire write cycle to avoid data bus contention on the common i/o lines. if g is left low, internal circuitry will turn off the output buffers t wlqz after w goes low. autostoreplus ? operation the STK16C88-3?s automatic store on power- down is completely transparent to the system. the autostore ? initiation takes less than 500ns when power is lost (v cc < v switch ) at which point the part depends only on its internal capacitor for store completion. if the power supply drops faster than 20 s/volt before vccx reaches vswitch, then a 2.2 ohm resistor should be inserted between vccx and the system supply to avoid a momentary excess of current between vccx and vcap. in order to prevent unneeded store operations, automatic store s will be ignored unless at least one write operation has taken place since the most recent store or recall cycle. software - initiated store cycles are performed regardless of whether or not a write operation has taken place. power-up recall during power up, or after any low-power condition (v cc < v reset ), an internal recall request will be latched. when v cc once again exceeds the sense voltage of v switch , a recall cycle will automatically be initiated and will take t restore to complete. if the STK16C88-3 is in a write state at the end of power-up recall , the sram data will be corrupted. to help avoid this situation, a 10k resistor should be connected either between w and system v cc or between e and system v cc . software nonvolatile store the STK16C88-3 software store cycle is initiated by executing sequential read cycles from six spe - cific address locations. during the store cycle an erase of the previous nonvolatile data is first per - formed, followed by a program of the nonvolatile elements. the program operation copies the sram data into nonvolatile memory. once a store cycle is initiated, further input and output are disabled until the cycle is completed. because a sequence of read s from specific addresses is used for store initiation, it is impor - tant that no other read or write accesses inter - vene in the sequence or the sequence will be aborted and no store or recall will take place. device operation
STK16C88-3 march 2006 8 document control # ml0019 rev 0.2 to initiate the software store cycle, the following read sequence must be performed: 1. read address 0e38 (hex) valid read 2. read address 31c7 (hex) valid read 3. read address 03e0 (hex) valid read 4. read address 3c1f (hex) valid read 5. read address 303f (hex) valid read 6. read address 0fc0 (hex) initiate store cycle the software sequence must be clocked with e controlled read s. once the sixth address in the sequence has been entered, the store cycle will commence and the chip will be disabled. it is important that read cycles and not write cycles be used in the sequence, although it is not necessary that g be low for the sequence to be valid. after the t store cycle time has been fulfilled, the sram will again be activated for read and write operation. software nonvolatile recall a software recall cycle is initiated with a sequence of read operations in a manner similar to the software store initiation. to initiate the recall cycle, the following sequence of read operations must be performed: 1. read address 0e38 (hex) valid read 2. read address 31c7 (hex) valid read 3. read address 03e0 (hex) valid read 4. read address 3c1f (hex) valid read 5. read address 303f (hex) valid read 6. read address 0c63 (hex) initiate recall cycle internally, recall is a two-step procedure. first, the sram data is cleared, and second, the nonvola - tile information is transferred into the sram cells. after the t recall cycle time the sram will once again be ready for read and write operations. the recall operation in no way alters the data in the nonvolatile elements. the nonvolatile data can be recalled an unlimited number of times. hardware protect the STK16C88-3 offers hardware protection against inadvertent store operation and sram write s during low-voltage conditions. when v cc < v switch , all software store operations and sram write s are inhibited. low average active power the STK16C88-3 draws significantly less current when it is cycled at times longer than 55ns. figure 2 shows the relationship between i cc and read cycle time. worst-case current consumption is shown for both cmos and ttl input levels (commercial tem - perature range, v cc = 3.6v, 100% duty cycle on chip enable). figure 3 shows the same relationship for write cycles. if the chip enable duty cycle is less than 100%, only standby current is drawn when the chip is disabled. the overall average cur - rent drawn by the STK16C88-3 depends on the fol - lowing items: 1) cmos vs. ttl input levels; 2) the duty cycle of chip enable; 3) the overall cycle rate for accesses; 4) the ratio of read s to write s; 5) the operating temperature; 6) the v cc level; and 7) i/ o loading. figure 2: i cc (max) reads 0 10 20 30 40 50 50 100 150 200 cycle time (ns) ttl cmos average active current (ma) 50 figure 3: i cc (max) writes 0 10 20 30 40 50 100 150 200 cycle time (ns) ttl cmos average active current (ma) 0 10 20 30 40 50 average active current (ma)
STK16C88-3 march 2006 9 document control # ml0019 rev 0.2 ordering information temperature range blank = commercial (0 to 70c) i = industrial (?40 to 85c ) access time 35 = 35ns lead finish f = 100% sn (matte tin) package w = plastic 28-pin 600 mil dip w f 35 i STK16C88-3
STK16C88-3 march 2006 10 document control # ml0019 rev 0.2 document revision history revision date summary 0.0 december 2002 0.1 september 2003 added lead-free lead finish 0.2 march 2006 removed 45ns and 55ns speed grades, removed leaded lead finish.
STK16C88-3 march 2006 11 document control # ml0019 rev 0.2

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